Method of fabricating trench MOS

Details Method of fabricating trench MOS Method of fabricating trench MOS

1997-09-09

1999-12-14

Fahmy, Wael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438270, 438275, 438259, H01L 21336

Patent

active

060016922

ABSTRACT:
A semiconductor device includes a substrate, a plurality of active regions on the substrate, the active regions having recessed and elevated types and being alternatively in parallel with the substrate, respectively, and a plurality of first and second field insulating layers at field regions adjacent to the active regions, the first field insulating layer being parallel with the substrate and the second field insulating layer being perpendicular to the substrate.

REFERENCES:
patent: 4580330 (1986-04-01), Pollack et al.
patent: 5049515 (1991-09-01), Tzeng
patent: 5083173 (1992-01-01), Yamada et al.
patent: 5180680 (1993-01-01), Yang
patent: 5414287 (1995-05-01), Hong
patent: 5460989 (1995-10-01), Wake
patent: 5780340 (1998-07-01), Garder et al.
patent: 5801416 (1998-09-01), Choi et al.

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