Method of fabricating transparent conductive ito films

Details Method of fabricating transparent conductive ito films Method of fabricating transparent conductive ito films

1995-09-22

1997-02-25

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C23C 1435

Patent

active

056056109

ABSTRACT:
A film having a low resistivity until the end of a sputtering target life is obtained when fabricating transparent conductive ITO films on a number of or a single substrate continuously by magnetron sputtering. A method of fabricating by magnetron sputtering transparent conductive ITO films having In and O as basic constituent elements and added Sn as a donor in an atmosphere comprising an inert gas and O.sub.2 is provided in which a sintered mixture of oxides of In and Sn is used as a target. This method includes a first step of performing film deposition, and a second step of performing, after the first step is stopped, electric discharge at a power density at which the rate at which the target is eroded is faster than the formation rate of the superficial oxygen-deficient layer of the target in order to remove the superficial oxygen-deficient layer of the target formed in the first step. The first and second steps are alternately repeated.

REFERENCES:
patent: 4124474 (1978-11-01), Bomchil et al.
M. Buchanan et al, Thin Solid Films, vol. 80, pp. 373-382 (Jun. 1981).

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