Method of fabricating transistor for semiconductor device

Details Method of fabricating transistor for semiconductor device Method of fabricating transistor for semiconductor device

2009-06-26

2011-11-22

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S413000, C257SE21431

Reexamination Certificate

active

08062948

ABSTRACT:
A method of fabricating a transistor in a semiconductor device includes forming a gate structure over a substrate, forming a first trench by etching the substrate on either side of the gate structure to a first depth, ion-implanting dopants of a first conductivity type to form a source/drain region in the substrate on the side of the gate structure with the first trench, etching the substrate on the side of the gate structure with the first trench to a second depth larger than the first depth to form a second trench, and growing an epitaxial layer within the second trench.

REFERENCES:
patent: 7670923 (2010-03-01), Nayak et al.
patent: 2010/0099231 (2010-04-01), Siprak
patent: 101998040751 (1998-08-01), None
patent: 100834740 (2008-06-01), None
Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Nov. 3, 2010.
Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Aug. 26, 2011.

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