Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2007-05-09
2009-10-06
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S762000, C257S052000, C257SE21150, C257SE27114
Reexamination Certificate
active
07598159
ABSTRACT:
A method of fabricating a thin film transistor substrate includes forming a gate wiring on an insulating substrate and forming a gate insulating layer on the gate wiring; performing a first hydrogen plasma treatment with respect to the gate insulating layer; forming a first active layer with a first thickness at a first deposition rate on the gate insulating layer; performing a second hydrogen plasma treatment with respect to the first active layer; and forming a second active layer with a second thickness greater than the first thickness at a second deposition rate greater than the first deposition rate, on the first active layer.
REFERENCES:
patent: 5796116 (1998-08-01), Nakata et al.
patent: 05-335577 (1993-12-01), None
patent: 08-051214 (1996-02-01), None
patent: 08-335703 (1996-12-01), None
Choi Jae-ho
Choi Yong-mo
Kim Byoung-june
Kunal Girotra
Oh Hwa-yeul
Cantor & Colburn LLP
Everhart Caridad M
Samsung Electronics Co,. Ltd.
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