Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-09-19
2010-06-22
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257S059000
Reexamination Certificate
active
07741163
ABSTRACT:
A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.
REFERENCES:
patent: 6528816 (2003-03-01), Jackson et al.
patent: 2004/0113152 (2004-06-01), Kim et al.
patent: 2005/0269562 (2005-12-01), Yang et al.
patent: 2005/0274953 (2005-12-01), Kim et al.
patent: 2006/0192487 (2006-08-01), Choi et al.
Ho Jia-Chong
Hu Tarng-Shiang
Lin Tsung-Hsien
Wang Yi-Kai
Yan Jing-Yi
Industrial Technology Research Institute
Jianq Chyun IP Office
Le Thao X
Trice Kimberly
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