Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-03-11
2008-03-11
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S099000, C438S780000, C257SE21561
Reexamination Certificate
active
07341897
ABSTRACT:
A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, thus all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.
REFERENCES:
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H. Koezuka et al., Polythlophene Field-Effect Transistor With Polypyrrole Worked as Source and Drain Electrodes, Apr. 12, 1993, pp. 1794-1796, vol. 62 (15), Applied Physics Letters.
H. Fuchigami et al., Polythienylenevinylene Thin-Film Transistor With High Carrier Mobility, Sep. 6, 1993, pp. 1372-1374, vol. 63 (10), Appl. Physics. Letters.
Gilles Horowitz, An Analytical Model for Organic-Based Thin-Film Transisitors, Jul. 1, 1991, pp. 469-475, vol. 70 (1), J. Applied Physics.
Giles Horowitz, Charge Transport in Polycrystalline Oligothiaopene Thin Film Transistors, pp. 1349-1350, vol. 121 2001.
Byun Young Hun
Koo Bon Won
Lee Sang Yoon
Lee Tae Woo
Lyu Yi Yeol
Booth Richard A.
Buchanan & Ingersoll & Rooney PC
Samsung Electronics Co,. Ltd.
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