Method of fabricating strained-silicon transistors and...

Details Method of fabricating strained-silicon transistors and... Method of fabricating strained-silicon transistors and...

2005-09-23

2009-02-17

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C257SE21633

Reexamination Certificate

active

07491615

ABSTRACT:
A method of fabricating strained-silicon transistors includes providing a semiconductor substrate, in which the semiconductor substrate contains a gate structure thereon; performing an etching process to form two recesses corresponding to the gate structure within the semiconductor substrate; performing an oxygen flush on the semiconductor substrate; performing a cleaning process on the semiconductor substrate; and performing a selective epitaxial growth (SEG) to form an epitaxial layer in each recess for forming a source/drain region.

REFERENCES:
patent: 6406973 (2002-06-01), Lee
patent: 7022610 (2006-04-01), Chou et al.
patent: 2005/0035409 (2005-02-01), Ko
patent: 2005/0269671 (2005-12-01), Faure et al.
patent: 2006/0105511 (2006-05-01), Yang et al.
patent: 1542545 (2004-11-01), None
patent: 1607651 (2005-04-01), None
patent: 448512 (2001-08-01), None
patent: I226657 (2005-01-01), None

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