Method of fabricating strained-silicon transistors

Details Method of fabricating strained-silicon transistors Method of fabricating strained-silicon transistors

2005-11-14

2009-06-23

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S299000, C438S378000, C438S655000, C438S778000, C438S787000, C438S791000, C438S938000

Reexamination Certificate

active

07550356

ABSTRACT:
A method of fabricating strained-silicon transistors includes providing a semiconductor substrate, in which the semiconductor substrate includes a gate, at least a spacer, and a source/drain region; performing a first rapid thermal annealing (RTA) process; removing the spacer and forming a high tensile stress film over the surface of the gate and the source/drain region; and performing a second rapid thermal annealing process.

REFERENCES:
patent: 6180464 (2001-01-01), Krivokapic et al.
patent: 6991998 (2006-01-01), Bedell et al.
patent: 7002209 (2006-02-01), Chen et al.
patent: 7060579 (2006-06-01), Chidambaram et al.
patent: 7115954 (2006-10-01), Shimizu et al.
patent: 7129548 (2006-10-01), Chan et al.
patent: 7358128 (2008-04-01), Kim
patent: 2004/0142545 (2004-07-01), Ngo
patent: 2004/0253791 (2004-12-01), Sun
patent: 2005/0247926 (2005-11-01), Sun
patent: 2005/0260808 (2005-11-01), Chen
patent: 2006/0017138 (2006-01-01), Ting
patent: 2006/0094194 (2006-05-01), Chen et al.
patent: 2006/0118892 (2006-06-01), Wu et al.
patent: 2007/0066022 (2007-03-01), Chen et al.
patent: 2007/0105368 (2007-05-01), Tsui et al.
patent: 2007/0108525 (2007-05-01), Yang et al.
patent: 6-45355 (1994-02-01), None

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