Method of fabricating storage capacitor in semiconductor...

Details Method of fabricating storage capacitor in semiconductor... Method of fabricating storage capacitor in semiconductor...

2005-05-23

2008-10-14

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S303000, C257S532000

Reexamination Certificate

active

07436014

ABSTRACT:
A storage capacitor has a double cylinder type structure, with a small cylinder in a lower part thereof and a cylindrical lower electrode structure disposed on the cylindrical contact plug. A method of fabricating the storage capacitor includes: forming a contact hole for exposing an activation region of a transistor; depositing a conductive film to form within the contact hole a contact plug of the storage capacitor having a void therein; opening an upper part of the void of the contact plug; and covering a surface of the device with material to form the storage capacitor electrode, to obtain the storage capacitor electrode having a double cylindrical structure.

REFERENCES:
patent: 5811331 (1998-09-01), Ying et al.
patent: 5827766 (1998-10-01), Lou
patent: 5861671 (1999-01-01), Tsai et al.

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