Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2005-10-21
2008-12-02
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S052000, C438S053000
Reexamination Certificate
active
07459329
ABSTRACT:
A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/=100 Mpa. The dopants can either be deposited in successive layers to produce a laminated structure with a residual mechanical stress of less than +/=100Mpa or simultaneously to produce a laminated structure having a mechanical stress of less than +/=100Mpa.
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Antaki Robert
Ouellet Luc
(Marks & Clerk)
Coleman W. David
DALSA Semiconductor Inc.
Kim Su C
Mitchell Richard J.
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