Method of fabricating silicon-based MEMS devices

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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C438S052000, C438S053000

Reexamination Certificate

active

07459329

ABSTRACT:
A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/=100 Mpa. The dopants can either be deposited in successive layers to produce a laminated structure with a residual mechanical stress of less than +/=100Mpa or simultaneously to produce a laminated structure having a mechanical stress of less than +/=100Mpa.

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patent: 7144750 (2006-12-01), Ouellet et al.
Orpanam et al “Control of residual stress of polysilicon thin films by heavy dopinbg in surface micromachining” Transducers, San Francisco, Jun. 24-27, 1991.
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Furtsch M. et al “influence of Anneals in Oxygen Ambient on Stress of Thick Polvsilicon Lavers”. vol. 76. No. 1-3. Aug. 30, 1999 pp. 335-342.
Gennissen P T J et al “Bipolar-compatible Epitaxial Poly for Smart Sensors—Stress Minimization and applications” vol. 62, No. 1-3 Jul. 1997 pp. 636-645.
Alley R L et al “The Effect of Release-etch processing on surface Microstructure Stiction” Solid State Sensor and Actuator Workshop, 1992—pp. 202-207.

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