Method of fabricating silicided LDD transistor

Details Method of fabricating silicided LDD transistor Method of fabricating silicided LDD transistor

1996-01-02

1997-08-19

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438392, 438396, H01L 21265

Patent

active

056588151

ABSTRACT:
A gate-drain overlapped device, comprising: a first conductive type substrate; a gate insulating film formed on the substrate; a gate comprising a gate conductive line patterned on the gate insulating film, and a conductive layer coated on the gate conductive line and extending to a predetermined length on the gate insulating film; and a drain/source region comprising a second conductive type low density diffusion region in the substrate below the extending area of the conductive layer and a second conductive type high density diffusion region in contact with the low density diffusion region in the substrate, which is significantly improved in the resistance of a polysilicon gate conductive line and in uniform electrical properties.

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patent: 5089432 (1992-02-01), Yoo
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patent: 5444024 (1995-08-01), Anjum et al.
patent: 5472896 (1995-12-01), Chen et al.
patent: 5508212 (1996-04-01), Wang et al.
patent: 5543340 (1996-08-01), Lee

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