Method of fabricating SiC semiconductor device

Details Method of fabricating SiC semiconductor device Method of fabricating SiC semiconductor device

2005-01-11

2005-01-11

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S268000, C438S285000, C438S767000, C438S105000, C438S779000

Reexamination Certificate

active

06841436

ABSTRACT:
In a method of fabricating a SiC semiconductor device, a surface of a SiC layer (5, 48, 102) is processed into a cleaned surface terminated at Si. An oxide film (7, 49, 105) is formed on the cleaned surface of the SiC layer. The SiC layer with the oxide film is subjected to thermal oxidation at a temperature in a range of 700° C. to 900° C. so that only terminal Si at the cleaned surface of the SiC layer is oxidated and an interface between the oxide film and the SiC layer becomes an SiO2/SiC cleaned interface.

REFERENCES:
patent: 6589337 (2003-07-01), Hisada et al.
patent: 6667102 (2003-12-01), Amy et al.
patent: 6764963 (2004-07-01), Fukuda et al.
patent: 2000-133657 (2000-05-01), None
patent: 2000-252461 (2000-09-01), None
patent: 2001-345320 (2001-12-01), None
patent: 2002-222950 (2002-08-01), None

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