Method of fabricating shallow trench isolation structures

Details Method of fabricating shallow trench isolation structures Method of fabricating shallow trench isolation structures

1998-05-07

2000-11-28

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438297, 438424, 438431, 438692, H01L 21336, H01L 2176, H01L 21461

Patent

active

06153479&

ABSTRACT:
A method of fabricating shallow trench isolation structures. A substrate is provided and a masking layer and an oxide layer are formed respectively on the substrate. The masking layer, the oxide layer and the substrate are defined and an opening is formed within the substrate. A portion of masking layer and the oxide layer are removed and an insulating material is later formed to fill with the opening. The masking layer is removed and the shallow trench isolation structure of this invention is therefore achieved.

REFERENCES:
patent: 5895254 (1999-04-01), Huang et al.
patent: 5940716 (1999-08-01), Jin et al.
patent: 5963819 (1999-10-01), Lan

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