Method of fabricating semiconductor memory device

Details Method of fabricating semiconductor memory device Method of fabricating semiconductor memory device

1999-12-23

2000-11-28

Smith, Matthew

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438691, 438240, 438259, 438260, 438754, H01L 218234

Patent

active

061534609

ABSTRACT:
A method of fabricating a semiconductor memory device comprises the steps of: (a) forming an interlayer insulating film on a semiconductor substrate, opening a contact hole in said interlayer insulating film, and burying a plug in said contact hole; (b) forming a first insulating film on said interlayer insulating film inclusive of said plug, and forming a trench in said first insulating film above said plug; (c) forming a first conductive film on said first insulating film inclusive of said trench, and etching back said first conductive film by a chemical mechanical polishing method to form a bottom electrode inside said trench; (d) forming a high dielectric film or a ferroelectric film and a second conductive film in this order on said first insulating film inclusive of said bottom electrode; and (e) patterning simultaneously said high dielectric film or ferroelectric film and said second conductive film to form a capacitor insulating film and a top electrode.

REFERENCES:
patent: 4999689 (1991-03-01), Iguchi et al.
patent: 5619071 (1997-04-01), Myers et al.
patent: 5677231 (1997-10-01), Maniar et al.
patent: 5950084 (1999-09-01), Chao
patent: 5986301 (1999-11-01), Fukushima et al.
patent: 5994214 (1999-11-01), Hayashi et al.
patent: 5995774 (1999-09-01), Kang

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