Method of fabricating semiconductor integrated circuit device

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C257SE23118

Reexamination Certificate

active

08058185

ABSTRACT:
Provided are a semiconductor integrated device and a method for fabricating the same. The semiconductor integrated circuit includes a semiconductor substrate including a first dopant, a first conductive layer pattern formed on the semiconductor substrate, an interlayer dielectric layer formed on the first conductive layer pattern, a second conductive layer pattern formed on the interlayer dielectric layer, and a first vacuum ultraviolet (VUV) blocking layer which blocks a VUV ray radiated to the semiconductor substrate.

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Chinese Office Action dated Sep. 11, 2009, issued in corresponding Chinese Application No. 200610091601.3.

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