Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-10-23
2011-11-15
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE23118
Reexamination Certificate
active
08058185
ABSTRACT:
Provided are a semiconductor integrated device and a method for fabricating the same. The semiconductor integrated circuit includes a semiconductor substrate including a first dopant, a first conductive layer pattern formed on the semiconductor substrate, an interlayer dielectric layer formed on the first conductive layer pattern, a second conductive layer pattern formed on the interlayer dielectric layer, and a first vacuum ultraviolet (VUV) blocking layer which blocks a VUV ray radiated to the semiconductor substrate.
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Chinese Office Action dated Sep. 11, 2009, issued in corresponding Chinese Application No. 200610091601.3.
Chang Dong-ryul
Kim Sung-hoan
Lee Soo-cheol
Lee Tae-jung
Movva Amar
Onello & Mello LLP
Samsung Electronics Co,. Ltd.
Smith Bradley K
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