Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-11-07
2008-12-09
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C438S308000, C438S938000
Reexamination Certificate
active
07462542
ABSTRACT:
A method of fabricating semiconductor devices is provided. A plurality of gate structures is formed over a substrate. A source region and a drain region are formed in the substrate and adjacent to sidewalls of each gate structure. A self-aligned salicide block (SAB) layer is formed over the substrate to cover the gate structures and the exposed surface of the substrate. An anneal process is performed. The SAB layer creates a tension stress during the anneal process so that the substrate under the gate structures is subjected to the tension stress. A portion of the SAB layer is removed to expose a portion of the gate structures and a portion of the surface of the substrate. A salicide process is performed.
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Huang Cheng-Tung
Liao Kuan-Yang
Liu Alex
Shiau Wei-Tsun
Duong Khanh B
Jianq Chyun IP Office
Smith Zandra
United Microelectronics Corp.
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