Method of fabricating semiconductor device with separate...

Details Method of fabricating semiconductor device with separate... Method of fabricating semiconductor device with separate...

2005-03-29

2005-03-29

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

Reexamination Certificate

active

06872667

ABSTRACT:
Methods of fabricating semiconductor devices using separate periphery and cell region etching steps are provided. A substrate is provided, wherein the substrate has a cell region and a periphery region separated by a shallow trench isolation (STI). The STI is filled with a dielectric material. A protective layer is formed on the periphery region, allowing semiconductor structures to be formed in the cell region without damaging the surface of the periphery region. Upon forming the semiconductor structures in the cell region, a portion of the dielectric material in the STI adjacent to the cell region is partially removed. The dielectric material adjacent to the periphery region is substantially unetched.

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Oehrlein, G.S., et al., “Surface Science Issues in Plasma Etching,” [on-line] IBM Journal of Research and Development, vol. 43, ½ (1999), Retrieved From: http://www.research.ibm.com/journal/rd/431/oehrlein.html.
“Technical Comparison of Floating Gate Reprogrammable Nonvolatile Memories,” Technical Paper, Silicon Storage Technology, Inc. (Nov. 2001) pp. 1-8.

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