Method of fabricating semiconductor device with reduced pitch

Details Method of fabricating semiconductor device with reduced pitch Method of fabricating semiconductor device with reduced pitch

2008-10-15

2010-06-08

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S700000, C438S734000, C438S763000, C257SE21240

Reexamination Certificate

active

07732338

ABSTRACT:
A method of fabricating a semiconductor device includes depositing a first film on a workpiece film so that a resist is formed on the first film, processing the first film with the resist serving as a mask, depositing a second film along the first film, processing the second film so that the second film is left only on a sidewall of the first film, depositing a third film on the substrate, exposing a sidewall of the second film, depositing a fourth film along the sidewall and an upper surface of the third film, removing the fourth film except for only its part on the sidewall of the second film, depositing a fifth film on the substrate, planarizing the second to fifth films so that the upper surfaces of the films are exposed, and processing the workpiece film while the second and fifth films serve as a mask.

REFERENCES:
patent: 6638441 (2003-10-01), Chang et al.
patent: 7312158 (2007-12-01), Miyagawa et al.
patent: 2002/0076495 (2002-06-01), Maloney et al.
patent: 2002/0179962 (2002-12-01), Kinoshita
patent: 2007/0059914 (2007-03-01), Jung et al.
patent: 2007/0202705 (2007-08-01), Kim et al.
patent: 2006-32648 (2006-02-01), None

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