Method of fabricating semiconductor device with MIS structure

Details Method of fabricating semiconductor device with MIS structure Method of fabricating semiconductor device with MIS structure

1998-05-14

2000-02-22

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438291, 438301, 438303, 438305, 438769, 438786, H01L 21336, H01L 2131

Patent

active

06027977&

ABSTRACT:
A fabrication method of a semiconductor device with the MIS structure is provided, which prevents the boron penetration phenomenon from occurring even if a gate insulator film is as thin as approximately 3 nm or less. After a silicon nitride film is formed on a semiconductor substrate, oxygen is doped into the silicon nitride film by a suitable process such as a thermal oxidation, ion implantation or plasma doping process, thereby forming an oxygen-doped silicon nitride film having an oxygen-rich region that extends along an interface between the oxygen-doped silicon nitride film and the substrate. The oxygen-rich region is higher in oxygen concentration than the remainder of the oxygen-doped silicon nitride film. At least part of the oxygen-doped silicon nitride film serves as a gate insulator film of a MISFET. Next, a gate electrode of the MISFET is formed on the oxygen-doped silicon nitride film. A dopant is selectively introduced into the substrate to form a pair of source/drain regions of the MISFET in the substrate at each side of the boron-doped gate electrode. Finally, the substrate is heat-treated to activate or anneal the dopant introduced into the substrate.

REFERENCES:
patent: 5258333 (1993-11-01), Shappir et al.
Chuan Lin et al., "Leakage Current, Reliability Characteristics, and Boron Penetration of Ultra-Thin (32-36.ANG.) O.sub.2 -Oxides and N.sub.2 O/NO Oxynitrides", IEDM 96, pp. 331-334, 1996 no month.

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