Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-09-03
2000-06-20
Elms, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438142, 438305, H01L 218234
Patent
active
060777346
ABSTRACT:
The present invention is to provide a method for fabricating a semiconductor device which can minimize the defect density of the substrate, reduce the junction depth of the source/drain, and minimize the leakage current in the source/drain regions by implanting boron ions into the substrate in two steps which are different from each other by implant energy and implant dose.
According to the invention, this method of fabricating semiconductor device comprises the steps of forming a gate oxide layer and a gate electrode on a semiconductor substrate or on a semiconductor substrate having N-well; implanting boron ions into the substrate at first and second ion implantation steps, the interstitial point defect region caused by the first ion implantation step overlapping with the vacancy point defect region caused by the second ion implantation step; and activating the boron implanted into the substrate by means of a subsequent thermal process to form source/drain regions.
REFERENCES:
patent: 5286660 (1994-02-01), Chiou et al.
patent: 5436176 (1995-07-01), Shimizu et al.
patent: 5795808 (1998-08-01), Park
patent: 5872047 (1999-02-01), Lee et al.
Elms Richard
Hyundai Electronics Industries Co,. Ltd.
Luu Pho
Nath Gary M.
Novick Harold L.
LandOfFree
Method of fabricating semiconductor device with extremely shallo does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating semiconductor device with extremely shallo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device with extremely shallo will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1851298