Method of fabricating semiconductor device using selective...

Details Method of fabricating semiconductor device using selective... Method of fabricating semiconductor device using selective...

2007-07-24

2007-07-24

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S429000, C438S270000, C438S700000, C257SE21008, C257S548000, C257S571000

Reexamination Certificate

active

11024660

ABSTRACT:
A method of fabricating a semiconductor device uses selective epitaxial growth (SEG), by which leakage current generation is minimized using lateral SEG growth in case a contact intrudes a shallow track isolation feature. The method includes steps of forming a sidewall spacer on a gate, selectively growing an epitaxial layer in a lateral direction relative to the sidewall spacer and the gate, and forming a contact on the epitaxial layer.

REFERENCES:
patent: 6204137 (2001-03-01), Teo et al.
patent: 6306723 (2001-10-01), Chen et al.
patent: 2004/0070023 (2004-04-01), Kim et al.

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor device using selective... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor device using selective..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device using selective... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3779753