Method of fabricating semiconductor device using...

Details Method of fabricating semiconductor device using... Method of fabricating semiconductor device using...

2006-07-11

2006-07-11

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C438S475000, C438S509000

Reexamination Certificate

active

07074698

ABSTRACT:
A method of fabricating a semiconductor device using a PECVD method is provided, which improves the adhesion strength of a deposited dielectric layer to an underlying layer and the reliability of the deposited dielectric layer. After placing a substrate in a chamber, a gas having a thermal conductivity of 0.1 W/mK or greater (e.g., H2or He) is introduced into the chamber, thereby contacting the gas with the substrate for stabilization of a temperature of the substrate. A desired dielectric layer is deposited on or over the substrate in the chamber using a PECVD method after the step of introducing the gas. As the desired dielectric layer, a dielectric layer having a low dielectric constant, such as a SiCH, SiCHN, or SiOCH layer, is preferably used.

REFERENCES:
patent: 6559039 (2003-05-01), Wang et al.
patent: 6713127 (2004-03-01), Subramony et al.
Noguchi, et al., “TDDB Improvement in CU Metallization Under Bias Stress”, 2000 IEEE, 38th Annual International Reliability Physics Symposium, pp. 339-434.
Junji Noguchi, et al., “TDDB Improvement in Cu Metallization under Bias Stress”, 30th Annual International Reliability Physics Symposium, San Jose, CA, IEEE 2000, pp. 339-343.

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