Method of fabricating semiconductor device including high temper

Details Method of fabricating semiconductor device including high temper Method of fabricating semiconductor device including high temper

1995-10-26

1998-06-23

Quach, T. N.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438384, 438647, 438655, 438770, H01L 21283, H01L 218244

Patent

active

057704953

ABSTRACT:
The invention provides a method of fabricating a semiconductor device, including the steps of (a) forming an impurity region at a surface of a silicon substrate, (b) depositing an insulative film over the silicon substrate, (c) forming a contact hole through the insulative film to expose the impurity region of the silicon substrate, (d) forming an electrode wiring over the contact hole, the electrode wiring comprising a refractory metal silicide film and a silicon film overlying on the metal silicide film, the metal silicide film overlying the exposed impurity region, (e) depositing a second insulative film over a resultant, (f) depositing a polysilicon film on the second insulative film, (g) patterning the polysilicon film to form an element, and (h) heat-treating a resultant at high temperature in oxidizing atmosphere. The step (h) is to be carried out at any time after the step (f) has been completed. In the method, even if a semiconductor device is heat-treated at high temperature in oxidizing atmosphere, there occurs no voids in the silicon substrate below the refractory metal silicide film. This is because silicon atoms are supplied from the silicon film overlying on the refractory metal silicide film to the metal silicide film. Thus, reliable electrical connection between the electrode wiring and the silicon substrate is ensured.

REFERENCES:
patent: 4392150 (1983-07-01), Courrages
patent: 4569122 (1986-02-01), Chan
patent: 4965214 (1990-10-01), Choi et al.
patent: 5462894 (1995-10-01), Spinner et al.

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