Method of fabricating semiconductor device including...

Details Method of fabricating semiconductor device including... Method of fabricating semiconductor device including...

2005-11-17

2008-08-26

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S794000

Reexamination Certificate

active

07416997

ABSTRACT:
A method of fabricating a semiconductor device having a silicon nitride layer substantially free of impurities includes forming a silicon nitride layer on a semiconductor substrate and annealing the semiconductor substrate having the silicon nitride layer in an atmosphere of ammonia (NH3) gas to remove impurities from the silicon nitride layer. The silicon nitride layer may be formed using BTBAS as a silicon precursor.

REFERENCES:
patent: 5874368 (1999-02-01), Laxman et al.
patent: 6515350 (2003-02-01), Moore
patent: 2003/0092285 (2003-05-01), Hinoue et al.
patent: 2005/0059260 (2005-03-01), Bu et al.
patent: 2004-266158 (2004-09-01), None
patent: 2001-0050379 (2001-06-01), None

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