Method of fabricating semiconductor device having triple LDD...

Details Method of fabricating semiconductor device having triple LDD... Method of fabricating semiconductor device having triple LDD...

2005-09-06

2005-09-06

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000

Reexamination Certificate

active

06939770

ABSTRACT:
A method of fabricating a semiconductor device having a triple LDD (lateral diffused dopants) structure is disclosed. This fabrication method requires a single implant process, leading to reduction in fabrication costs and fabrication time. Moreover, this fabrication method increases the surface area of the gate structure of the semiconductor device that is available for silicide to be formed, leading to lower gate resistance.

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