Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-12-27
2008-10-07
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S629000, C438S669000, C438S675000, C257SE21597, C257SE21660
Reexamination Certificate
active
07432199
ABSTRACT:
Provided is a method for fabricating a semiconductor device having reduced contact resistance. In the method, gate patterns defining a narrow opening and a wide opening are formed having an upper portion of a predetermined region of a semiconductor substrate. After gate spacers are formed on sidewalls of the gate patterns, an ion implantation process that uses the gate patterns and the gate spacers as an ion mask is performed to form a plug doped region in a portion of the semiconductor substrate that is located below the wide opening. At this point, the gate spacers are formed to expose a portion of a bottom surface of the wide opening and to fill a lower portion of the narrow opening.
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Kim Sun-Young
Lee Sung-Tae
Song Young-Soo
Ahmadi Mohsen
F. Chau & Associates LLC
Geyer Scott B.
Samsung Electronics Co,. Ltd.
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