Method of fabricating semiconductor device having gate...

Details Method of fabricating semiconductor device having gate... Method of fabricating semiconductor device having gate...

2006-11-28

2006-11-28

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000

Reexamination Certificate

active

07141466

ABSTRACT:
According to the present invention, there is provided a semiconductor device comprising:an interface insulating film selectively formed on a predetermined region of a semiconductor substrate, and having a film thickness of substantially one atomic layer;a gate insulating film formed on said interface insulating film, and having a dielectric constant higher than that of said interface insulating film;a gate electrode formed on said gate insulating film; andsource and drain regions formed in a surface region of said semiconductor substrate on two sides of a channel region positioned below said gate electrode.

REFERENCES:
patent: 7091135 (2006-08-01), Inumiya et al.
patent: 2005/0106896 (2005-05-01), Fukuchi
patent: 2005/0205948 (2005-09-01), Rotondaro et al.
patent: 2005/0233526 (2006-10-01), Watanabe et al.
patent: 2000-049349 (2000-02-01), None
patent: 2002-314067 (2002-10-01), None
patent: 2003218108 (2003-07-01), None
patent: 2003-249497 (2003-09-01), None
patent: 2005-064032 (2005-03-01), None
patent: WO 2004/008544 (2004-01-01), None
Inumiya, et al.; “Method of Manufacturing Semiconductor Device”, U.S. Patent Application No. 10/789,337, filed Mar. 12, 2004.
Notification of Reason for Rejection issued by the Japanese Patent Office on May 30, 2006, for Japanese Patent Application No. 2004-131523, and English-language translation thereof.

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