Method of fabricating semiconductor device having analog propert

Details Method of fabricating semiconductor device having analog propert Method of fabricating semiconductor device having analog propert

1998-08-26

2000-11-28

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438234, H01L 214763

Patent

active

061535028

ABSTRACT:
A method is provided for fabricating an analog and a digital semiconductor device close to each other on a surface of a semiconductor substrate. The analog device is formed on an insulating layer, and in a step configuration with respect to the insulating layer on the side of the digital device. Some deposition steps are used for forming both devices. In addition, the method teaches to form a spacer out of insulating material in the concave corner of the step configuration. The spacer prevents unwanted residual matter from remaining in the concave corner after an etching step and insulates the analog device better.

REFERENCES:
patent: 5296400 (1994-03-01), Park et al.
patent: 5472895 (1995-12-01), Park
patent: 5480837 (1996-01-01), Liaw et al.
patent: 5766992 (1998-06-01), Chou et al.
patent: 5780339 (1998-07-01), Liu et al.
patent: 5924011 (1999-07-01), Huang

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