Method of fabricating semiconductor device having a salicide str

Details Method of fabricating semiconductor device having a salicide str Method of fabricating semiconductor device having a salicide str

1996-01-29

1998-06-02

Quach, T. N.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438486, 438586, 438655, 438683, H01L 21336

Patent

active

057598991

ABSTRACT:
The invention provides a method of fabricating a semiconductor device, including the steps of (a) depositing a titanium film over a silicon substrate, (b) depositing an amorphous silicon film on the titanium film, (c) carrying out first thermal annealing to form a first TiSi.sub.2 film over a resultant, (d) carrying out second thermal annealing to cause a single crystal silicon layer to grow in a region in which a source/drain region is to be formed, (e) successively removing the amorphous silicon film and the first TiSi.sub.2 film, and (f) forming a highly concentrated diffusion layer in the region, the diffusion layer having conductivity opposite to that of the silicon substrate. In accordance with the method, it is possible to form a salicided MOS transistor which includes a source/drain diffusion layer having shallow junction depth, and low-resistive source/drain regions.

REFERENCES:
patent: 5079180 (1992-01-01), Rodder et al.
patent: 5346860 (1994-09-01), Wei
patent: 5387535 (1995-02-01), Wilmemeyer
patent: 5409853 (1995-04-01), Yu
patent: 5443996 (1995-08-01), Lee et al.
"Raised Source/Drain MOSFET with Dual Sidewall Spacers" Mark Rodder; IEEE Electron Device Letters, vol. 12, No. 3; Mar. 1991 pp. 89-91.
Lau, S., "Solid Phase Epitaxy in Silicide-Forming Systems", Thin Solid Films, vol. 47, 1977, pp. 313-322, Sep. 1977.
Lou, Y., et al., "The Process Window of a-Si/Ti Bilayer Metallization . . . ", IEEE Transactions on Electron Devices, vol. 39, No. 8, Aug. 1992, pp. 1835-1843, Aug. 1992.

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor device having a salicide str does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor device having a salicide str, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device having a salicide str will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1459110