Method of fabricating semiconductor device having...

Details Method of fabricating semiconductor device having... Method of fabricating semiconductor device having...

2010-02-18

2011-11-15

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

08058168

ABSTRACT:
Example embodiments relate to methods of fabricating a semiconductor device having a metal-semiconductor compound region. A method according to example embodiments may include forming semiconductor pillars on a semiconductor substrate. The semiconductor substrate between the semiconductor pillars may be etched to form a trench region. A dielectric isolation pattern partially filling the trench region may be formed, and dielectric sidewall spacers may be formed on sidewalls of the semiconductor pillars. Metal-semiconductor compound regions may be formed on sidewalls of a portion of the trench region that is not filled by the isolation pattern.

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