Method of fabricating semiconductor device for preventing a...

Details Method of fabricating semiconductor device for preventing a... Method of fabricating semiconductor device for preventing a...

2008-12-16

2010-11-09

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S282000, C438S296000, C257S328000, C257S330000, C257SE21676, C257SE21693

Reexamination Certificate

active

07829415

ABSTRACT:
A method of fabricating a semiconductor device includes forming a plurality of pillar patterns on a substrate, filling a gap between the pillar patterns with a first conductive layer, forming a first hard mask layer pattern over the pillar patterns adjacent in one direction, etching the first conductive layer using the first hard mask layer pattern as an etch barrier, forming a second hard mask pattern over the pillar pattern adjacent in the other direction that crosses the one direction, and forming a gate electrode surrounding the pillar patterns by etching the first conductive layer etched using the second hard mask layer pattern as an etch barrier.

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KR Pub. 10-2009-0093399, Eun-Jeong Kim “The manufacturing method of the semiconductor device” (Sep. 2, 2009), Machine English Translation.
Office Action dated Jan. 21, 2010, for Korean application No. 10-2008-0031469, citing the above references.

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