Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-07
2006-02-07
Chen, Jack (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S595000
Reexamination Certificate
active
06995066
ABSTRACT:
The present invention provides a method of fabricating a semiconductor device, by which leakage current is minimized and by which drivability of transistor is sustained. The present invention includes forming a gate pattern having a gate oxide layer underneath on a semiconductor substrate, forming a first oxide layer on the substrate including the gate pattern, forming lightly doped regions in the semiconductor substrate to be aligned with the gate pattern, forming a second oxide layer on the first oxide layer, forming a spacer on the second oxide layer over a sidewall of the gate pattern, forming a sacrifice layer over the substrate including the spacer, forming source and drain regions in the substrate to be aligned with the gate pattern and to be partially overlapped with the lightly doped regions, respectively, and removing the sacrifice insulating layer and portions of the first and second oxide layers failing to be covered with the spacer.
REFERENCES:
patent: 5573965 (1996-11-01), Chen et al.
patent: 6770540 (2004-08-01), Ko
Chen Jack
Dongbuanam Semiconductor Inc.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
LandOfFree
Method of fabricating semiconductor device by using... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating semiconductor device by using..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device by using... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3710760