Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-03-18
2008-12-16
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257S288000, C257SE21347, C257SE21475, C257SE21596, C438S308000, C438S293000, C438S149000
Reexamination Certificate
active
07465614
ABSTRACT:
A semiconductor device and method of fabricating the same are provided. The method includes: depositing a silicon layer containing amorphous silicon on a substrate; partially crystallizing the amorphous silicon by applying an annealing process to the silicon layer under an atmosphere of H2O at a predetermined temperature; forming a polycrystalline silicon layer by applying an laser annealing process to the partially crystallized amorphous silicon layer; forming a gate insulating layer on the polycrystalline silicon layer; and forming a gate electrode on the gate insulating layer, so that a substrate is prevented from being bent due to high temperature crystallization while the amorphous silicon is crystallized through an SPC process, thereby reducing defects of the thin film transistor.
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Bushnell , Esq. Robert E.
Jr. Carl Whitehead
McCall Shepard Sonya D
Samsung SDI & Co., Ltd.
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