Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2011-08-02

2011-08-02

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S284000

Reexamination Certificate

active

07989279

ABSTRACT:
A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided. The method includes forming a plurality of first conductive patterns in a insulation layer as closed curves, forming a plurality of mask patterns on the insulation layer, the mask patterns exposing end portions of each of the first conductive patterns, and forming a plurality of second conductive patterns in the insulation layer as lines by removing the end portions of each of the first conductive patterns.

REFERENCES:
patent: 2006/0046407 (2006-03-01), Juengling
patent: 2007/0287101 (2007-12-01), Kim et al.
patent: 1997-0004070 (1997-01-01), None
patent: 2006-0110097 (2006-10-01), None
patent: 2006-0110706 (2006-10-01), None
patent: 2007-0005787 (2007-01-01), None
English language abstract of Korean Publication No. 2006-0110097.
English language abstract of Korean Publication No. 2006-0110706.
English language abstract of Korean Publication No. 2007-0005787.

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2716402