Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-07-05
2011-07-05
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S199000, C257SE21296
Reexamination Certificate
active
07972958
ABSTRACT:
Provided is a method of fabricating a semiconductor device including a dual silicide process. The method may include sequentially siliciding and stressing a first MOS region, and sequentially siliciding and stressing a second MOS region after siliciding and stressing the first MOS region, the second MOS region being a different type than the first MOS region.
REFERENCES:
patent: 7064025 (2006-06-01), Fang et al.
patent: 7741220 (2010-06-01), Iinuma
patent: 2006/0128086 (2006-06-01), Chidambarrao et al.
patent: 2008/0116521 (2008-05-01), Lee et al.
patent: 2003-060076 (2003-02-01), None
patent: 10-2005-0078104 (2005-08-01), None
patent: 10-2007-0039384 (2007-04-01), None
Kim Sang-doo
Kwon Sang-Wook
Lee Jung-Deog
Lee Jung-Hoon
Nam Seo-woo
Dang Phuc T
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
LandOfFree
Method of fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2641893