Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1999-06-28

2000-11-14

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438381, 438393, 438394, H01L 218242

Patent

active

061469386

ABSTRACT:
A native film formed on the surface of a silicon substrate is removed. Arsenic is doped into the surface of the silicon substrate to form an n-type impurity diffusion layer as a lower capacitor electrode. A silicon nitride film as a capacitor insulating film is formed on the n-type impurity diffusion layer without growing any oxide film on the surface of the n-type impurity diffusion layer. An upper capacitor electrode is formed on the silicon nitride film.

REFERENCES:
patent: 5670431 (1997-09-01), Huanga et al.
patent: 5766785 (1998-06-01), Yuuichi et al.
patent: 5789290 (1998-08-01), Sun
patent: 5989956 (1999-11-01), Huang

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