Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1996-12-26

2000-05-30

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438382, 438250, H01L 218234

Patent

active

060690364

ABSTRACT:
A semiconductor device and a method of fabricating the same are disclosed. A resistor, a lower plate of an analog capacitor and a gate electrode of a MOS transistor are simultaneously formed over a substrate where an isolation film is formed. Junction region are formed at both sides of the gate in the substrate. A dummy gate electrode over the resistor where a first insulating layer is arranged between the resistor and the dummy gate electrode and an upper plate over the lower plate where a second insulating layer is arranged between the lower and upper plates, are simultaneously formed. A metal silicide layer is then formed over the dummy gate electrode, the resistor, the gate electrode, the junction regions and the lower and upper plates of the analog capacitor.

REFERENCES:
patent: 4367580 (1983-01-01), Guterman
patent: 5126279 (1992-06-01), Roberts
patent: 5736421 (1998-04-01), Shimomura
patent: 5767544 (1998-06-01), Kuroda et al.
patent: 5780333 (1998-07-01), Kim

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