Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1997-04-17

1999-11-16

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438233, 438163, H01L 218238

Patent

active

059857110

ABSTRACT:
A method of fabricating a semiconductor device includes the steps of forming a plurality of gate electrodes on a first region and a second region of a substrate, the plurality of gate electrodes having cap insulating layers thereon; forming source and drain regions in the first region and the second region, the source and drain regions of the second region having an LDD structure; forming an insulating layer on the substrate including the plurality of gate electrodes; forming contact holes in the insulating layer to simultaneously expose the source and the drain regions of the first region and the cap insulating layer on the gate electrodes in the second region; selectively removing the cap insulating layer on the gate electrodes in the second region; and forming a metal line in the contact holes and on the insulating layer.

REFERENCES:
patent: 5384287 (1995-01-01), Fukase

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1324025