Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2007-11-12

2011-10-25

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S285000, C438S429000, C257S190000, C257S616000, C257SE29193

Reexamination Certificate

active

08043919

ABSTRACT:
A method of fabricating a semiconductor device is provided. A gate structure is formed on a substrate and then a first spacer is formed at a sidewall of the gate structure. Next, recesses are respectively formed in the substrate at two sides of the first spacer. Thereafter, a buffer layer and a doped semiconductor compound layer are formed in each recess. An extra implantation region is respectively formed on the surfaces of each buffer layer and each doped semiconductor compound layer. Afterward, source/drain contact regions are formed in the substrate at two sides of the gate structure.

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