Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2007-04-02

2009-12-15

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S195000, C438S283000, C438S306000, C257SE21045, C257SE21159, C257SE21179

Reexamination Certificate

active

07632734

ABSTRACT:
A method of fabricating a semiconductor device is disclosed. The method of fabricating a semiconductor device provides a semiconductor substrate. A gate dielectric layer is formed on the semiconductor substrate. A first conductive layer is formed on the gate dielectric layer, wherein the first conductive layer is an in-situ doped conductive layer. A second conductive layer is formed on the first conductive layer. The second conductive layer and the first conductive layer are patterned to form a gate electrode.

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patent: 6127212 (2000-10-01), Chen et al.
patent: 6291325 (2001-09-01), Hsu
patent: 6967384 (2005-11-01), Beintner et al.
patent: 2003/0102503 (2003-06-01), Rabkin et al.

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