Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-11-09
2009-08-04
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S372000, C438S373000, C438S232000, C438S508000
Reexamination Certificate
active
07569457
ABSTRACT:
An implantation step of a dopant ion for forming source and drain regions (S and D) is divided into one implantation of a dopant ion for forming a p
junction with a well region (3), and one implantation of a dopant ion that does not influence a position of the p
junction between the source and drain regions (S and D) and the well region with a shallow implantation depth and′ a large implantation amount. After conducting an activation heat treatment of the dopant, a surface of the source/drain region is made into cobalt suicide12, so that the source/drain region (S and D) can have a low resistance, and a p
junction leakage can be reduced.
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Abe Hiromi
Fukada Shinichi
Hashimoto Naotaka
Kojima Masanori
Momiji Hiroshi
Antonelli, Terry Stout & Kraus, LLP.
Le Dung A.
Renesas Technology Corp.
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