Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2006-01-04

2009-06-30

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S706000, C257SE21579

Reexamination Certificate

active

07553761

ABSTRACT:
A method of fabricating a semiconductor device is provided. The method includes forming a low-k dielectric layer on a semiconductor substrate, forming a mask pattern on the low-k dielectric layer, and dry etching the low-k dielectric layer using the mask pattern as an etch mask. A dry etching gas is used for the dry etching of the low-k dielectric layer. The dry etching gas includes a mixture of a gas containing chlorine atoms and at least one gas selected from a group consisting of a gas containing oxygen atoms, a gas containing nitrogen atoms, and an inert gas. The dry etching gas does not contain fluorine atoms.

REFERENCES:
patent: 7122479 (2006-10-01), Ohmoto et al.
patent: 7279428 (2007-10-01), Lin et al.
patent: 2004/0074869 (2004-04-01), Wang et al.
patent: 2004-022974 (2004-01-01), None
patent: 10-2001-0081453 (2001-08-01), None
patent: 10-2002-0009440 (2002-02-01), None
patent: 10-2003-0087041 (2003-11-01), None

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4095936