Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2006-01-23

2008-11-11

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257SE21176

Reexamination Certificate

active

07449402

ABSTRACT:
Provided is a method of fabricating a semiconductor device, the method including: forming an insulating layer on a single crystal substrate; etching the insulating layer in a predetermined pattern to expose the surface of the single crystal substrate; depositing an amorphous material on the insulating layer and the exposed surface of the single crystal substrate; and completely melting the amorphous material on the single crystal substrate and the insulating layer using laser annealing and crystallizing the melted amorphous material. The semiconductor device has a single crystalline silicon gate on the insulating layer.

REFERENCES:
patent: 5470763 (1995-11-01), Hamada
patent: 6841851 (2005-01-01), Jung
patent: 2002/0192914 (2002-12-01), Kizilyalli et al.
patent: 2002-075987 (2002-03-01), None
patent: 10-0195195 (1999-02-01), None
Official Action (Notice to Submit Response) issued by the Korean Intellectual Property Office in corresponding 1030681 Korean Patent Application No. 10-2005-0005835; Apr. 26, 2006; and English translation thereof.

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