Method of fabricating semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S258000, C438S443000, C257SE21680

Reexamination Certificate

active

11219752

ABSTRACT:
A method of fabricating a semiconductor device includes forming on a semiconductor substrate a gate electrode with a gate insulating film being interposed between the substrate and the electrode, forming an insulating film for element isolation protruding from a surface of the semiconductor substrate, forming an oxide film on the surface of the semiconductor substrate with the gate electrode and the element isolation insulating film having been formed, removing the oxide film in a region in which a self-aligned contact hole is to be formed while using a resist pattern for removing the oxide film formed in a region in which the self-aligned contact hole is formed, and etching a part of the element isolation insulating film protruding from the surface of the semiconductor substrate so that said part is substantially on a level with the surface of the semiconductor substrate, while using the resist pattern for removing the oxide film formed in the region in which the self-aligned contact hole is formed.

REFERENCES:
patent: 2005/0048689 (2005-03-01), Mabuchi
patent: 2002-57230 (2002-02-01), None

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