Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2007-06-19

2007-06-19

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S593000, C257SE21179

Reexamination Certificate

active

11493591

ABSTRACT:
There is provided a method of fabricating a semiconductor device comprising the steps of applying resist to a polysilicon film formed across the surface of a substrate and forming a plurality of openings in a resist pattern, for determining a spacing between floating gates adjacent to each other, causing the openings of the resist pattern to undergo uniform contraction by use of, for example, deformation due to thermal flow to thereby form other openings, and etching portions of the polysilicon film, in the openings as contracted to thereby form the floating gate on both sides of the respective openings as contracted. With the method described, it becomes possible to reduce the spacing between the floating gates adjacent to each other above the resolution limit of an exposure system, thereby enlarging a floating gate width.

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