Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2007-03-27

2007-03-27

Owens, Douglas W. (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S194000, C438S266000

Reexamination Certificate

active

11126285

ABSTRACT:
A method of fabricating a semiconductor device includes forming a resist pattern so that an opening between select gates of a select gate transistor is formed in a memory cell region, implanting threshold-adjusting ions under the select gate with the resist pattern serving as a mask and removing an oxide film, forming a nitride film and an interlayer insulation film after the resist pattern has been removed, forming a resist pattern used to form a contact hole between the select gates and a contact hole for a transistor to be formed in the peripheral circuit region, the transistor having a higher breakdown voltage than a memory cell transistor and etching the interlayer insulation film, the nitride film and the gate insulation film individually with the resist pattern serving as a mask.

REFERENCES:
patent: 2006/0022259 (2006-02-01), Kobayashi et al.
patent: 2003-7817 (2003-01-01), None

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