Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2007-04-10

2007-04-10

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S199000, C257SE21633

Reexamination Certificate

active

11027841

ABSTRACT:
A method of fabricating a semiconductor device is provided, by which leakage current is reduced by minimizing electron or hole density in a source/drain forming a P/N junction with a transistor channel area. The method includes forming a gate insulating layer on a semiconductor substrate, forming a channel ion area in the substrate, forming a gate electrode on the gate insulating layer, forming a sidewall insulating layer on the gate electrode, forming lightly doped regions in the substrate adjacent to the channel ion area and aligned with the gate electrode, forming a spacer insulating layer on the sidewall insulating layer, forming spacers on sidewalls of the gate electrode, and forming heavily doped regions in the substrate aligned with the spacer.

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