Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2006-07-11

2006-07-11

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C438S656000, C438S586000

Reexamination Certificate

active

07074665

ABSTRACT:
An implantation step of a dopant ion for forming source and drain regions (S and D) is divided into one implantation of a dopant ion for forming a p
junction with a well region (3), and one implantation of a dopant ion that does not influence a position of the p
junction between the source and drain regions (S and D) and the well region with a shallow implantation depth and a large implantation amount. After conducting an activation heat treatment of the dopant, a surface of the source/drain region is made into cobalt silicide12, so that the source/drain region (S and D) can have a low resistance, and a p
junction leakage can be reduced.

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