Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2006-01-31

2006-01-31

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S761000, C438S762000, C438S778000, C438S787000, C438S791000

Reexamination Certificate

active

06992020

ABSTRACT:
A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm3or less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O3.

REFERENCES:
patent: 5523616 (1996-06-01), Den
patent: 6037018 (2000-03-01), Jang et al.
patent: 6133160 (2000-10-01), Komiyama et al.
patent: 6228780 (2001-05-01), Kuo et al.
patent: 6235650 (2001-05-01), Yao
patent: 6251795 (2001-06-01), Shan et al.
patent: 6277706 (2001-08-01), Ishikawa
patent: 6319849 (2001-11-01), Oda et al.
patent: 6333547 (2001-12-01), Tanaka et al.
patent: 6407007 (2002-06-01), Tsan et al.
patent: 6489254 (2002-12-01), Kelkar et al.
patent: 6579764 (2003-06-01), Kuwazawa
patent: 2002/0001917 (2002-01-01), Park
patent: 2002/0076916 (2002-06-01), Yamashita et al.
patent: 2002/0197823 (2002-12-01), Yoo et al.
patent: 2994616 (1999-10-01), None
patent: 2000-349082 (2000-12-01), None
patent: 2002-0002578 (2002-01-01), None
Notification of Argument Submission mailed on Jan. 24, 2005 by the Korean Patent Office in application No. 10-2003-0045983, and English translation of Notification.

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