Method of fabricating self-aligned contact window

Details Method of fabricating self-aligned contact window Method of fabricating self-aligned contact window

1999-02-01

2000-10-31

Utech, Benjamin L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438696, 438700, 438514, 438197, 438743, 438705, H01L 21425

Patent

active

061401684

ABSTRACT:
A method of fabricating a self-aligned contact window includes forming an undoped dielectric layer on a substrate having a least gate structure. The dopants are implanted into a pre-determined region of the undoped dielectric layer and the dielectric layer with the dopants is then removed. A self-aligned contact is therefore completed.

REFERENCES:
patent: 3907616 (1975-09-01), Wiemer
patent: 4358889 (1982-11-01), Dickman et al.
patent: 4359817 (1982-11-01), Dickman et al.
patent: 4554728 (1985-11-01), Shepard
patent: 4686000 (1987-08-01), Heath
patent: 5235189 (1993-08-01), Hayden et al.
patent: 5648291 (1997-07-01), Sung
patent: 5943581 (1999-08-01), Lu et al.

Affiliated with

Also associated with

Rating

Method of fabricating self-aligned contact window does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating self-aligned contact window, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating self-aligned contact window will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2050439